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LPC660 Datasheet(PDF) 1 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
Part No. LPC660
Description  Low Power CMOS Quad Operational Amplifier
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Maker  NSC [National Semiconductor (TI)]
Homepage  http://www.national.com
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LPC660
Low Power CMOS Quad Operational Amplifier
General Description
The LPC660 CMOS Quad operational amplifier is ideal for
operation from a single supply. It features a wide range of
operating voltages from +5V to +15V and features rail-to-rail
output swing in addition to an input common-mode range
that includes ground. Performance limitations that have
plagued CMOS amplifiers in the past are not a problem with
this design. Input V
OS, drift, and broadband noise as well as
voltage gain (into 100 k
Ω and5kΩ) are all equal to or better
than widely accepted bipolar equivalents, while the power
supply requirement is typically less than 1 mW.
This chip is built with National’s advanced Double-Poly
Silicon-Gate CMOS process.
See the LPC662 datasheet for a Dual CMOS operational
amplifier and LPC661 datasheet for a single CMOS opera-
tional amplifier with these same features.
Applications
n High-impedance buffer
n Precision current-to-voltage converter
n Long-term integrator
n High-impedance preamplifier
n Active filter
n Sample-and-Hold circuit
n Peak detector
Features
n Rail-to-rail output swing
n Micropower operation:
(1 mW)
n Specified for 100 k
Ω and5kΩ loads
n High voltage gain:
120 dB
n Low input offset voltage:
3 mV
n Low offset voltage drift:
1.3 µV/˚C
n Ultra low input bias current:
2 fA
n Input common-mode includes V
n Operation range from +5V to +15V
n Low distortion:
0.01% at 1 kHz
n Slew rate:
0.11 V/µs
n Full military temp. range available
Connection Diagram
14-Pin DIP/SO
DS010547-1
Top View
March 1998
© 1999 National Semiconductor Corporation
DS010547
www.national.com




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