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TLP741G Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part No. TLP741G
Description  TOSHIBA Photocoupler GaAs Ired & Photo-Thyristor
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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TLP741G
2002-09-25
2
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
IF
60
mA
Forward current derating (Ta ≥ 39°C)
∆IF / °C
-0.7
mA / °C
Peak forward current (100µs pulse, 100pps)
IFP
1
A
Power dissipation
PD
100
mW
Power dissipation derating (Ta ≥ 25°C)
∆PD / °C
-1.0
mW / °C
Reverse voltage
VR
5
V
Junction temperature
Tj
125
°C
Peak forward voltage(RGK = 27kΩ)
VDRM
400
V
Peak reverse voltage(RGK = 27kΩ)
VRRM
400
V
On
-state current
IT(RMS)
150
mA
On
-state current derating (Ta ≥ 25°C)
∆IT / °C
-2.0
mA / °C
Peak on
-state current (100µs pulse, 120pps)
ITP
3
A
Peak one cycle surge current
ITSM
2
A
Peak reverse gate voltage
VGM
5
V
Power dissipation
PD
150
mW
Power dissipation derating (Ta ≥ 25°C)
∆PD / °C
-2.0
mW / °C
Junction temperature
Tj
100
°C
Storage temperature range
Tstg
-55~125
°C
Operating temperature range
Topr
-55~100
°C
Lead soldering temperature (10s)
Tsol
260
°C
Total package power dissipation
PT
250
mW
Total package power dissipation derating
(Ta ≥ 25°C)
∆PT / °C
-3.3
mW / °C
Isolation voltage (AC, 1 min., R.H. ≤ 60%)
BVS
4000
Vrms
Recommended Operating Conditions
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Supply voltage
VAC
120
Vac
Forward current
IF
15
20
25
mA
Operating temperature
Topr
-25
85
°C
Gate to cathode resistance
RGK
27
33
kΩ
Gate to cathode capacity
CGK
0.01
0.1
µF




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