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S9018W Datasheet(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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S9018W Datasheet(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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1 / 3 page  Production specification Silicon Epitaxial Planar Transistor S9018W F060 www.gmicroelec.com Rev.A 1 FEATURES High current gain bandwidth product. power dissipation.(PC=200mW) APPLICATIONS NPN epitaxial silicon transistor. ORDERING INFORMATION SOT-323 Type No. Marking Package Code S9018 J8 SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 18 V VEBO Emitter-Base Voltage 4 V IC Collector Current -Continuous 50 mA PC Collector Dissipation 200 mW Tj,Tstg Junction and Storage Temperature -55 to +150 ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 25 V Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA,IB=0 18 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA,IC=0 4 V Collector cut-off current ICBO VCB=20V,IE=0 0.1 μA Collector cut-off current ICEO VCE=15V,IB=0 0.1 μA Emitter cut-off current IEBO VEB=3V,IC=0 0.1 μA DC current gain hFE VCE=5V,IC=1mA 70 190 Collector-emitter saturation voltage VCE(sat) IC=10 mA, IB= 1mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=10 mA, IB= 1mA 1.4 V Transition frequency fT VCE=5V, IC= 5mA f=400MHz 600 MHz Pb Lead-free |
Similar Part No. - S9018W_14 |
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Similar Description - S9018W_14 |
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