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STS4C3F60L Datasheet(PDF) 3 Page - STMicroelectronics |
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STS4C3F60L Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 11 page 3/11 STS4C3F60L ELECTRICAL CHARACTERISTICS (CONTINUED) Table 7: Switching On Table 8: Switching Off Table 9: Source-Drain Diodef (1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. (2) Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time N-CHANNEL VDD = 30 V, ID = 2 A, RG= 4.7 Ω, VGS = 4.5 V P-CHANNEL VDD = 30 V, ID = 1.5 A, RG= 4.7 Ω, VGS = 4.5 V (Resistive Load see, Figure 28) n-ch p-ch n-ch p-ch 15 124 28 54 ns ns ns ns Qg Total Gate Charge N-CHANNEL VDD= 48 V, ID= 4 A, VGS= 4.5 V P-CHANNEL VDD = 48 V, ID = 3 A, VGS = 4.5 V (see, Figure 31) n-ch p-ch 15 11.6 20.4 15.7 nC nC Qgs Gate-Source Charge n-ch p-ch 4 4.5 nC nC Qgd Gate-Drain Charge n-ch p-ch 4 4.7 nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time N-CHANNEL VDD = 30 V, ID = 2 A, RG= 4.7 Ω, VGS = 4.5 V P-CHANNEL VDD = 30 V, ID = 1.5 A, RG= 4.7 Ω, VGS = 4.5 V (Resistive Load see, Figure 28) n-ch p-ch n-ch p-ch 45 39 10 14.5 ns ns ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current n-ch p-ch 4 3 A A ISDM (2) Source-drain Current (pulsed) n-ch p-ch 16 12 A A VSD (1) Forward On Voltage ISD = 4 A, VGS = 0 ISD = 3 A, VGS = 0 n-ch p-ch 1.2 1.2 V V trr Reverse Recovery Time N-CHANNEL ISD = 4 A, di/dt = 100 A/µs VDD = 20V, Tj = 150°C P-CHANNEL ISD = 3 A, di/dt = 100 A/µs VDD = 20V, Tj = 150°C (see test circuit, Figure 29) n-ch p-ch 85 44 ns ns Qrr Reverse Recovery Charge n-ch p-ch 85 68.2 nC nC IRRM Reverse Recovery Current n-ch p-ch 2 3.1 A A |
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