MBRB2090CT-M3, MBRB20100CT-M3

www.vishay.com

Vishay General Semiconductor

Revision: 15-May-13

1

Document Number: 87980

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Dual Common-Cathode High-Voltage Schottky Rectifier

FEATURES

• Trench MOS Schottky technology

• Lower power losses, high efficiency

• Low forward voltage drop

• High forward surge capability

• High frequency operation

• Meets MSL level 1, per J-STD-020, LF maximum peak of

245 °C

• Material categorization: For definitions of compliance

TYPICAL APPLICATIONS

For use in high frequency rectifier of switching mode power

supplies, freewheeling diodes, DC/DC converters, or

polarity protection application.

MECHANICAL DATA

Case: TO-263AB

Molding compound meets UL 94 V-0 flammability rating

Base

P/N-M3

-

halogen-free,

RoHS-compliant,

and

commercial grade

Terminals:

Matte

tin

plated

leads,

solderable

per

J-STD-002 and JESD 22-B102



M3 suffix meets JESD 201 class 1A whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

Notes

 40 ms

PRIMARY CHARACTERISTICS

Package

TO-263AB

2 x 10 A

90 V, 100 V

150 A

0.65 V

150 °C

Diode variation

Common cathode

MBRB2090CT

MBRB20100CT

TMBS

®

TO-263AB

1

2

K

PIN 1

PIN 2

K

HEATSINK

PARAMETER

SYMBOL

MBRB2090CT

MBRB20100CT

UNIT

Maximum repetitive peak reverse voltage

90

100

V

Working peak reverse voltage

90

100

V

Maximum DC blocking voltage

90

100

V

total device

20

A

per diode

10

Peak forward surge current 8.3 ms single half sine-wave superimposed on

rated load per diode

150

A

dV/dt

10 000

V/μs

Operating junction and storage temperature range

- 65 to + 150

°C

PARAMETER

TEST CONDITIONS

SYMBOL

MAX.

UNIT

Maximum instantaneous forward voltage



0.80

V

0.65

0.75

Maximum reverse current per diode at

100

μA

6.0

mA