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SI5853DC Datasheet(PDF) 4 Page - Vishay Siliconix |
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SI5853DC Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 6 page Si5853DC Vishay Siliconix www.vishay.com 2-4 Document Number: 71239 S-21251—Rev. B, 05-Aug-02 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) MOSFET 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.0 0.1 0.2 0.3 0.4 01 2 3 45 TJ = 150_C ID =2.7 A 10 1 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage VSD -- Source-to-Drain Voltage (V) VGS -- Gate-to-Source Voltage (V) TJ =25_C 0 30 50 10 20 Single Pulse Power Time (sec) 40 1 100 600 10 10--1 10--2 10--4 10--3 10--3 10--2 1 10 600 10--1 10--4 100 --0.2 --0.1 0.0 0.1 0.2 0.3 0.4 --50 --25 0 25 50 75 100 125 150 ID = 250 mA 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Threshold Voltage TJ -- Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (sec) 1. Duty Cycle, D = 2. Per Unit Base = RthJA =90_C/W 3. TJM -- TA =PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM |
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