VT760-E3, VFT760-E3, VBT760-E3, VIT760-E3

www.vishay.com

Vishay General Semiconductor

Revision: 15-Dec-16

1

Document Number: 89130

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Trench MOS Barrier Schottky Rectifier

FEATURES

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 245 °C (for TO-263AB package)

• Solder bath temperature 275 °C maximum, 10 s, per

JESD 22-B106 (for TO-220AC, ITO-220AC and TO-262AA

package)

• Material categorization: for definitions of compliance

TYPICAL APPLICATIONS

For use in high frequency inverters, switching power

supplies, freewheeling diodes, OR-ing diode, DC/DC

converters and reverse battery protection.

MECHANICAL DATA

Case:

TO-220AC,

ITO-220AC,

TO-263AB

and

TO-262AA

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

Terminals:

Matte

tin

plated

leads,

solderable

per

J-STD-002 and JESD 22-B102



E3 suffix meets JESD 201 class 1A whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum















PRIMARY CHARACTERISTICS

7.5 A

60 V

100 A

0.60 V

150 °C

Package

TO-220AC, ITO-220AC,

TO-263AB, TO-262AA

Diode variations

Single die

TO-220AC

NC

K

K

A

TO-263AB

NC

A

K

TO-262AA

PIN 1

CASE

PIN 2

PIN 1

PIN 2

TMBS

®

ITO-220AC

VT760

VFT760

VIT760

VBT760

K

HEATSINK

A

NC

NC

A

K

HEATSINK

1

2

1

2

PARAMETER

SYMBOL

VT760

VFT760

VBT760

VIT760

UNIT

Maximum repetitive peak reverse voltage

60

V

Maximum average forward rectified current (fig. 1)

7.5

A

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

100

A

Non-repetitive avalanche energy



65

mJ

Peak repetitive reverse current



1.0

A

Isolation voltage (ITO-220AB only)



from terminal to heat sink t = 1 min

1500

V

Operating junction and storage temperature range

-55 to +150

°C