SFT1431

No.A1624-2/6

Electrical Characteristics at Ta

= 25°C

Parameter

Symbol

Conditions

Value

Unit

min

typ

max

Drain to Source Breakdown Voltage

V(BR)DSS

ID=1mA, VGS=0V

35

V

Zero-Gate Voltage Drain Current

IDSS

VDS=35V, VGS=0V

1

μA

Gate to Source Leakage Current

IGSS

VGS=±16V, VDS=0V

±10

μA

Gate Threshold Voltage

VGS(th)

VDS=10V, ID=1mA

1.2

2.6

V

Forward Transconductance

gFS

VDS=10V, ID=5.5A

5

S

Static Drain to Source On-State Resistance

RDS(on)1

ID=5.5A, VGS=10V

19

25

m

Ω

RDS(on)2

ID=3A, VGS=4.5V

28

39.5

m

Ω

RDS(on)3

ID=3A, VGS=4V

35

49

m

Ω

Input Capacitance

Ciss

VDS=20V, f=1MHz

960

pF

Output Capacitance

Coss

130

pF

Reverse Transfer Capacitance

Crss

84

pF

Turn-ON Delay Time

td(on)

See specified Test Circuit.

12

ns

Rise Time

tr

40

ns

Turn-OFF Delay Time

td(off)

60

ns

Fall Time

tf

36

ns

Total Gate Charge

Qg

VDS=20V, VGS=10V, ID=11A

17.3

nC

Gate to Source Charge

Qgs

3.2

nC

Gate to Drain “Miller” Charge

Qgd

3.6

nC

Forward Diode Voltage

VSD

IS=11A, VGS=0V

0.88

1.2

V

Switching Time Test Circuit

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be

indicated by the Electrical Characteristics if operated under different conditions.

PW=10μs

D.C.≤1%

P.G

50Ω

G

S

D

ID=5.5A

RL=2.7Ω

VDD=15V

VOUT

VIN

10V

0V

VIN

SFT1431