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BAV99DW Datasheet(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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BAV99DW Datasheet(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
2 / 3 page Production specification Surface Mount Fast Switching Diodes BAV99DW G016 www.gmicroelec.com Rev.A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN MAX UNIT Reverse breakdown voltage V(BR)R IR=2.5μA 75 V Forward voltage VF IF=1.0mA IF=10mA IF=50mA IF=150mA 0.715 0.855 1.0 1.25 V Reverse Current IR VR=75V VR=75V,Tj=150℃ VR=25V,Tj=150℃ VR=20V 2.5 50 30 25 uA uA uA nA Total Capacitance CT VR=0V,f=1.0MHz 2.0 pF Reverse Recovery time trr IF=IR=10mA,Irr=0.1*IR, RL=100Ω 4.0 ns TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified |
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