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PHD82NQ03LT Datasheet(PDF) 8 Page - NXP Semiconductors |
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PHD82NQ03LT Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 14 page Philips Semiconductors PHP/PHB/PHD82NQ03LT TrenchMOS™ logic level FET Product data Rev. 01 — 28 March 2002 8 of 14 9397 750 09308 © Koninklijke Philips Electronics N.V. 2002. All rights reserved. Tj =25 °C and 175 °C; VGS =0V ID = 50 A; VDD =15V Fig 12. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values. Fig 13. Gate-source voltage as a function of gate charge; typical values. 03ai59 0 20 40 60 80 0 0.4 0.8 1.2 VSD (V) IS (A) Tj = 25 ºC 175 ºC VGS = 0 V 03ai61 0 2 4 6 8 10 0 10203040 QG (nC) VGS (V) ID = 50 A Tj = 25 ºC VDD = 15 V |
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