PHB82NQ03LT datasheet(5/14 Pages) PHILIPS

Part #	PHB82NQ03LT

Description	TrenchMOS??logic level FET

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Manufacturer	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

PHP/PHB/PHD82NQ03LT

TrenchMOS™ logic level FET

Product data

Rev. 01 — 28 March 2002

5 of 14

9397 750 09308

5.

Characteristics

Table 4:

Characteristics

Tj =25 °C unless otherwise speciﬁed.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V(BR)DSS drain-source breakdown voltage

ID = 250 µA; VGS =0V

Tj =25 °C

30

--V

Tj = −55 °C

27

--V

VGS(th)

gate-source threshold voltage

ID = 1 mA; VDS =VGS; Figure 9

Tj =25 °C

1

1.9

2.5

V

Tj = 175 °C

0.6

-

V

Tj = −55 °C

-

2.9

V

IDSS

drain-source leakage current

VDS =30V; VGS =0V

Tj =25 °C

-

0.05

1

µA

Tj = 175 °C

-

500

µA

IGSS

gate-source leakage current

VGS = ±20 V; VDS = 0 V

-

10

100

nA

RDSon

drain-source on-state resistance

VGS =5V; ID =25A; Figure 7 and 8

Tj =25 °C

-

8.3

10

m

Ω

Tj = 175 °C

-

15

18

m

Ω

VGS = 10 V; ID =25A; Figure 7 and 8

-

6.3

8

m

Ω

Dynamic characteristics

Qg(tot)

total gate charge

ID = 50 A; VDD =15V; VGS =5V; Figure 13

-

16.7

-

nC

Qgs

gate-source charge

-

8

-

nC

Qgd

gate-drain (Miller) charge

-

5

-

nC

Ciss

input capacitance

VGS =0V; VDS = 25 V; f = 1 MHz; Figure 11

-1620 -pF

Coss

output capacitance

-

480

-

pF

Crss

reverse transfer capacitance

-

165

-

pF

td(on)

turn-on delay time

VDD =15V; ID = 25 A; VGS = 4.5 V; RG = 5.6 Ω

-20

-

ns

tr

rise time

-78

-

ns

td(off)

turn-off delay time

-

30

-

ns

tf

fall time

-24

-

ns

Source-drain diode

VSD

source-drain (diode forward) voltage IS = 25 A; VGS =0V; Figure 12

-

0.9

1.2

V

trr

reverse recovery time

IS = 10 A; dIS/dt = −100 A/µs;

VGS =0V; VDS =25V

-32

-

ns

Qr

recovered charge

-

24

-

nC

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