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PH5330 Datasheet(PDF) 2 Page - NXP Semiconductors |
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PH5330 Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 12 page Philips Semiconductors PH5330 N-channel enhancement mode field-effect transistor Product data Rev. 02 — 18 July 2003 2 of 12 9397 750 10951 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 5. Quick reference data 6. Limiting values Table 2: Quick reference data Symbol Parameter Conditions Typ Max Unit VDS drain-source voltage (DC) Tj =25 °C - 30 V ID drain current (DC) Tmb =25 °C; VGS = 10 V - 50 A Ptot total power dissipation Tmb =25 °C - 39 W Tj junction temperature - 150 °C RDSon drain-source on-state resistance VGS = 10 V; ID = 20 A; Tj =25 °C 4.6 5.3 m Ω VGS = 4.5 V; ID = 20 A; Tj =25 °C 8.0 10 m Ω Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) Tj =25to150 °C - 30 V VGS gate-source voltage (DC) - ±20 V ID drain current (DC) Tmb =25 °C; VGS = 10 V; Figure 2 and 3 -50 A IDM peak drain current Tmb =25 °C; pulsed; tp ≤ 10 µs; Figure 3 - 160 A Ptot total power dissipation Tmb =25 °C; Figure 1 -39 W Tstg storage temperature −55 +150 °C Tj operating junction temperature −55 +150 °C Source-drain diode ISM peak source (diode forward) current Tmb =25 °C; pulsed; tp ≤ 10 µs - 50 A |
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