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VS-SD600N Datasheet(PDF) 4 Page - Vishay Siliconix |
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VS-SD600N Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 8 page VS-SD600N/R Series www.vishay.com Vishay Semiconductors Revision: 21-Jan-14 4 Document Number: 93551 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 6 - Forward Power Loss Characteristics Fig. 7 - Forward Power Loss Characteristics Fig. 8 - Forward Power Loss Characteristics 20 40 60 80 100 120 140 160 180 Maximum Allowable Ambient Temperature (°C) 1 K/ W R = 0.0 2K / W - D e lta R 0.0 4 K/ W 0.0 8 K/ W 0.1K /W 0.2 K/ W 0.4 K/ W 0.6 K/ W 1.8 K/ W 0 100 200 300 400 500 600 700 800 900 1000 1100 0 200 400 600 800 1000 DC 180° 120° 90° 60° 30° RMSLimit Conduction Period Average Forward Current (A) SD600N/ RSeries (400V to 2000V) T = 180°C J 25 50 75 100 125 150 Maximum Allowable Ambient Temperature (°C) 1 K/ W R = 0.0 2 K/W - D elt a R 0.0 4 K/ W 0.06 K/W 0.1 K/W 0.2 K/W 0.4 K/W 0 100 200 300 400 500 600 700 800 900 0 100 200 300 400 500 600 180° 120° 90° 60° 30° RMSLimit Conduction Angle Average Forward Current (A) SD600N/ RSeries (2500V to 3200V) T = 150°C J 25 50 75 100 125 150 Maximum Allowable Ambient Temperature (°C) 1 K/W R = 0.0 2 K/ W - D elta R th SA 0.0 4 K / W 0.0 6 K / W 0.1 K/ W 0.2 K / W 0.4 K/ W 0 100 200 300 400 500 600 700 800 900 1000 1100 0 100 200 300 400 500 600 700 800 900 DC 180° 120° 90° 60° 30° RMSLimit Conduction Period Average Forward Current (A) SD600N/ RSeries (2500V to 3200V) T = 150°C J |
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