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VS-SD600N Datasheet(PDF) 2 Page - Vishay Siliconix

Part # VS-SD600N
Description  Standard Recovery Diodes (Stud Version), 600 A
Download  8 Pages
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

VS-SD600N Datasheet(HTML) 2 Page - Vishay Siliconix

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VS-SD600N/R Series
www.vishay.com
Vishay Semiconductors
Revision: 21-Jan-14
2
Document Number: 93551
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
SD600N/R
UNITS
04 to 20
22 to 32
Maximum average forward current
at case temperature
IF(AV)
180° conduction, half sine wave
600
A
92
54
°C
570
375
A
100
°C
Maximum RMS forward current
IF(RMS)
DC at TC = 75 °C (04 to 20), TC = 36 °C (25 to 32)
940
A
Maximum peak, one-cycle forward,
non-repetitive surge current
IFSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ
maximum
13 000
10 500
t = 8.3 ms
13 600
11 000
t = 10 ms
100 % VRRM
reapplied
10 900
8830
t = 8.3 ms
11 450
9250
Maximum I2t for fusing
I2t
t = 10 ms
No voltage
reapplied
845
551
kA2s
t = 8.3 ms
772
503
t = 10 ms
100 % VRRM
reapplied
598
390
t = 8.3 ms
546
356
Maximum I2
t for fusing
I2
t
t = 0.1 to 10 ms, no voltage reapplied
8450
5510
kA2
s
Low level value of threshold voltage
VF(TO)1
(16.7 % x
 x I
F(AV) < I <  x IF(AV)),
TJ = TJ maximum
0.78
0.84
V
High level value of threshold voltage
VF(TO)2
(I >
 x I
F(AV)), TJ = TJ maximum
0.87
0.88
Low level value of forward
slope resistance
rf1
(16.7 % x
 x I
F(AV) < I <  x IF(AV)),
TJ = TJ maximum
0.35
0.40
mW
High level value of forward
slope resistance
rf2
(I >
 x I
F(AV)), TJ = TJ maximum
0.31
0.38
Maximum forward voltage drop
VFM
Ipk = 1500 A, TJ = TJ maximum,
tp = 10 ms sinusoidal wave
1.31
1.44
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
SD600N/R
UNITS
04 to 20
22 to 32
Maximum junction operating
temperature range
TJ
- 40 to 180 - 40 to 150
°C
Maximum storage temperature range
TStg
- 55 to 200
Maximum thermal resistance,
junction to case
RthJC
DC operation
0.1
K/W
Maximum thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth, flat and greased
0.04
Maximum allowed
mounting torque ± 10 %
Not-lubricated threads
50
Nm
Approximate weight
454
g
Case style
See dimensions (link at the end of datasheet)
B-8
R
thJC CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
TEST CONDITIONS
UNITS
180°
0.012
0.008
TJ = TJ maximum
K/W
120°
0.014
0.014
90°
0.017
0.019
60°
0.025
0.026
30°
0.042
0.042


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