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V10P8-M3 Datasheet(PDF) 1 Page - Vishay Siliconix |
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V10P8-M3 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 5 page V10P8-M3, V10P8HM3 www.vishay.com Vishay General Semiconductor Revision: 05-May-15 1 Document Number: 87712 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.44 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. MECHANICAL DATA Case: TO-277A (SMPC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Base P/NHM3_X - halogen-free, RoHS-compliant, and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B,.....) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix meets JESD 201 class 2 whisker test Notes (1) Mounted on 30 mm x 30 mm pad areas aluminum PCB (2) Free air, mounted on recommended copper pad area PRIMARY CHARACTERISTICS IF(AV) 10 A VRRM 80 V IFSM 180 A VF at IF = 10 A (TA = 125 °C) 0.56 V TJ max. 150 °C Package TO-277A (SMPC) Diode variation Single die K 2 1 TO-277A (SMPC) TMBS® eSMP® Series Anode 1 Anode 2 Cathode K Available MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V10P8 UNIT Device marking code V108 Maximum repetitive peak reverse voltage VRRM 80 V Maximum average forward rectified current (fig. 1) IF (1) 10 A IF (2) 3.9 Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 180 A Voltage rate of change (rated VR) dV/dt 10 000 V/μs Operating junction and storage temperature range TJ, TSTG -40 to +150 °C |
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