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NGTB25N120FL2WAG Datasheet(PDF) 5 Page - ON Semiconductor

Part # NGTB25N120FL2WAG
Description  IGBT - Field Stop II / 4 Lead
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NGTB25N120FL2WAG Datasheet(HTML) 5 Page - ON Semiconductor

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NGTB25N120FL2WAG
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5
TYPICAL CHARACTERISTICS
Figure 13. Switching Time vs. IC
Figure 14. Switching Loss vs. RG
IC, COLLECTOR CURRENT (A)
RG, GATE RESISTOR (W)
80
70
60
50
40
30
20
10
1
10
100
1000
60
50
40
70
30
20
10
5
0
1
2
3
4
5
7
Figure 15. Switching Time vs. RG
Figure 16. Switching Loss vs. VCE
RG, GATE RESISTOR (W)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
60
70
50
40
30
20
10
5
10
100
1000
750
700
650
600
500
450
400
350
0.50
0.75
1.00
1.25
1.75
2.00
2.25
Figure 17. Switching Time vs. VCE
VCE, COLLECTOR−EMITTER VOLTAGE (V)
700
650
600
550
500
450
400
350
10
100
1000
VCE = 600 V
VGE = 15 V
TJ = 175°C
Rg = 10
W
Eoff
Eon
td(off)
td(on)
tr
tf
90
VCE = 600 V
VGE = 15 V
TJ = 175°C
IC = 25 A
6
550
800
Eoff
Eon
VGE = 15 V
TJ = 175°C
IC = 25 A
Rg = 10
W
VCE = 600 V
VGE = 15 V
TJ = 175°C
IC = 25 A
td(off)
td(on)
tr
tf
VGE = 15 V
TJ = 175°C
IC = 25 A
Rg = 10
W
td(off)
td(on)
tr
tf
750
1.50
Figure 18. Safe Operating Area
VCE, COLLECTOR−EMITTER VOLTAGE (V)
1K
100
10
1
0.1
100
1000
10K
800
10
1
50
ms
100
ms
1 ms
dc operation
Single Nonrepetitive
Pulse TC = 25°C
Curves must be derated
linearly with increase
in temperature
65
55
45
35
25
15
65
55
45
35
25
15


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