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MMBZ5228ELT3G Datasheet(PDF) 1 Page - ON Semiconductor

Part # MMBZ5228ELT3G
Description  Zener Voltage Regulators
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MMBZ5228ELT3G Datasheet(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2003
October, 2016 − Rev. 8
1
Publication Order Number:
MMBZ5221ELT1/D
MMBZ52xxELT1G Series,
SZMMBZ52xxELT1G Series
Zener Voltage Regulators
225 mW SOT−23 Surface Mount
This series of Zener diodes is offered in the convenient, surface
mount plastic SOT−23 package. These devices are designed to provide
voltage regulation with minimum space requirement. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.
Features
225 mW Rating on FR−4 or FR−5 Board
Zener Voltage Range − 2.4 V to 91 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (>16 kV) per Human Body Model
Peak Power − 225 W (8 x 20 ms)
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
Pb−Free Packages are Available
Mechanical Characteristics:
CASE:
Void-free, transfer-molded, thermosetting plastic case
FINISH:
Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260
°C for 10 Seconds
POLARITY:
Cathode indicated by polarity band
FLAMMABILITY RATING:
UL 94 V−0
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Peak Power Dissipation @ 20 ms (Note 1)
@ TL ≤ 25°C
Ppk
225
W
Total Power Dissipation on FR−5 Board,
(Note 2) @ TA = 25°C
Derated above 25°C
PD
225
1.8
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
RqJA
556
°C/W
Total Power Dissipation on Alumina
Substrate, (Note 3) @ TA = 25°C
Derated above 25°C
PD
300
2.4
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
RqJA
417
°C/W
Junction and Storage Temperature Range
TJ, Tstg
−65 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Nonrepetitive current pulse per Figure 9.
2. FR−5 = 1.0 X 0.75 X 0.62 in.
3. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina.
3
Cathode
1
Anode
See specific marking information in the device marking
column of the Electrical Characteristics table on page 2 of
this data sheet.
DEVICE MARKING INFORMATION
www.onsemi.com
SOT−23
CASE 318
STYLE 8
MARKING
DIAGRAM
1
3
2
1
Bxx M G
G
Bxx
= Device Code
xx
= (Refer to page 2)
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
Device
Package
Shipping
ORDERING INFORMATION
MMBZ52xxELT3G
SOT−23
(Pb−Free)
10000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MMBZ52xxELT1G
SOT−23
(Pb−Free)
3000 / Tape &
Reel
SZMMBZ52xxELT1G
SOT−23
(Pb−Free)
3000 / Tape &
Reel


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