© Semiconductor Components Industries, LLC, 2015

December, 2015 − Rev. 5

1

Publication Order Number:

NGTG15N60S1E/D

NGTG15N60S1EG

IGBT - Short-Circuit Rated

This Insulated Gate Bipolar Transistor (IGBT) features a robust and

cost effective Non−Punch Through (NPT) Trench construction, and

provides superior performance in demanding switching applications.

Offering both low on state voltage and minimal switching loss, the

IGBT is well suited for motor drive control and other hard switching

applications.

Features

Typical Applications

ABSOLUTE MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector−emitter voltage

650

V

Collector current

°C

°C

30

15

A

120

A

Gate−emitter voltage

$20

V

Power dissipation

°C

°C

117

47

W

Short circuit withstand time

5

ms

Operating junction temperature range

−55 to

+150

°C

Storage temperature range

−55 to

+150

°C

Lead temperature for soldering, 1/8” from

case for 5 seconds

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

TO−220

CASE 221A

STYLE 9

15 A, 650 V

Device

Package

Shipping

ORDERING INFORMATION

NGTG15N60S1EG

TO−220

(Pb−Free)

50 Units / Rail

www.onsemi.com

MARKING DIAGRAM

G

E

C

G15N60S1G

AYWW

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb−Free Package

G

C

E

C