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NGTD17T65F2WP Datasheet(PDF) 2 Page - ON Semiconductor |
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NGTD17T65F2WP Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 3 page NGTD17T65F2 www.onsemi.com 2 ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) Parameter Test Conditions Symbol Min Typ Max Units STATIC CHARACTERISTICS Collector−Emitter Breakdown Voltage VGE = 0 V, IC = 500 mA V(BR)CES 650 V Collector−Emitter Saturation Voltage VGE = 15 V, IC = 40 A VCE(sat) 1.7 2.0 V Gate−Emitter Threshold Voltage VGE = VCE, IC = 350 mA VGE(TH) 4.5 5.5 6.5 V Collector−Emitter Cutoff Current VGE = 0 V, VCE = 650 V ICES 0.5 mA Gate Leakage Current VGE = 20 V, VCE = 0 V IGES 200 nA DYNAMIC CHARACTERISTICS Input Capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Cies 4060 pF Output Capacitance Coes 179 pF Reverse Transfer Capacitance Cres 115 pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. DIE LAYOUT E = Emitter pad G = Gate pad All dimensions in mm E E G |
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