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NGTD13T120F2 Datasheet(PDF) 1 Page - ON Semiconductor |
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NGTD13T120F2 Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 3 page © Semiconductor Components Industries, LLC, 2016 March, 2016 − Rev. 0 1 Publication Order Number: NGTD13T120F2WP/D NGTD13T120F2 IGBT Die Trench Field Stop II IGBT Die for motor drive and inverter applications. Features • Extremely Efficient Trench with Field Stop Technology • Low VCE(sat) Loss Reduces System Power Dissipation Typical Applications • Industrial Motor Drives • Solar Inverters • UPS Systems • Welding MAXIMUM RATINGS Parameter Symbol Value Unit Collector−Emitter Voltage, TJ =25°C VCE 1200 V DC Collector Current, limited by TJ(max) IC (Note 1) A Pulsed Collector Current (Note 2) IC, pulse 60 A Gate−Emitter Voltage VGE ±20 V Maximum Junction Temperature TJ −55 to +175 °C Short Circuit Withstand Time, VGE = 15 V, VCE = 500V, TJ ≤ 150°C TSC 10 ms Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Depending on thermal properties of assembly. 2. Tpulse limited by Tjmax, 10 ms pulse, VGE = 15 V. MECHANICAL DATA Parameter Value Unit Die Size 3476 x 3580 mm2 Emitter Pad Size See die layout mm2 Gate Pad Size 405 x 670 mm2 Die Thickness 5 mils Wafer Size 150 mm Top Metal 5 mm AlSi Back Metal 2 mm TiNiAg Max possible chips per wafer 766 Passivation frontside Oxide−Nitride Reject ink dot size 25 mils Recommended storage environment: In original container, in dry nitrogen, or temperature of 18−28 °C, 30−65%RH Type: Bare Wafer in Jar Storage time: < 36 months Type: Die on tape in ring−pack Storage time: < 3 months ORDERING INFORMATION Device Inking? Shipping NGTD13T120F2WP Yes Bare Wafer in Jar NGTD13T120F2SWK Yes Sawn Wafer on Tape www.onsemi.com DIE OUTLINE VRCE = 1200 V IC = Limited by TJ(max) IGBT DIE G C E |
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