© Semiconductor Components Industries, LLC, 2016

March, 2016 − Rev. 0

1

Publication Order Number:

NGTD13T120F2WP/D

NGTD13T120F2

IGBT Die

Trench Field Stop II IGBT Die for motor drive and inverter

applications.

Features

Typical Applications

MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

1200

V

DC Collector Current, limited by

(Note 1)

A

Pulsed Collector Current (Note 2)

60

A

Gate−Emitter Voltage

±20

V

Maximum Junction Temperature

−55 to +175

°C

Short Circuit Withstand Time,

10

ms

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Depending on thermal properties of assembly.

MECHANICAL DATA

Parameter

Value

Unit

Die Size

3476 x 3580

Emitter Pad Size

See die layout

Gate Pad Size

405 x 670

Die Thickness

5

mils

Wafer Size

150

mm

Top Metal

5

mm AlSi

Back Metal

2

mm TiNiAg

Max possible chips per wafer

766

Passivation frontside

Oxide−Nitride

Reject ink dot size

25 mils

Recommended storage environment:

In original container, in dry nitrogen,

or temperature of 18−28

°C,

30−65%RH

Type: Bare

Wafer in Jar

Storage time:

< 36 months

Type: Die on

tape in

ring−pack

Storage time:

< 3 months

ORDERING INFORMATION

Device

Inking?

Shipping

NGTD13T120F2WP

Yes

Bare Wafer in Jar

NGTD13T120F2SWK

Yes

Sawn Wafer on Tape

www.onsemi.com

DIE OUTLINE

IGBT DIE

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