© Semiconductor Components Industries, LLC, 2016

March, 2016 − Rev. 0

1

Publication Order Number:

NGTD5R65F2WP/D

NGTD5R65F2

Fast Switching Rectifier Die

Fast switching low Vf rectifier die for free−wheeling applications.

Features

Typical Applications

MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Peak Reverse Voltage

650

V

Max Forward Conduction Current

(Note 1)

A

Maximum Junction Temperature

175

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Depending on thermal properties of assembly.

MECHANICAL DATA

Parameter

Value

Unit

Die Size

2232 x 2232

Die Thickness

10

mils

Wafer Size

150

mm

Top Pad Size (Anode)

1786 x 1786

Top Metal (Anode)

4

mm AISi

Back Metal (Cathode)

2

mm TiNiAg

Max possible chips per wafer

2681

Passivation frontside

Oxide−Nitride

Reject ink dot size

25 mils

Recommended storage environment:

In original container, in dry nitrogen,

or temperature of 18−28

°C,

30−65%RH

Type: Bare

Wafer in Jar

Storage time:

< 36 months

Type: Die on

tape in

ring−pack

Storage time:

< 3 months

ORDERING INFORMATION

Device

Inking?

Shipping

NGTD5R65F2WP

Yes

Bare Wafer in Jar

NGTD5R65F2SWK

Yes

Sawn Wafer on Tape

www.onsemi.com

DIE OUTLINE

DIODE DIE