© Semiconductor Components Industries, LLC, 2014

December, 2014 − Rev. 1

1

Publication Order Number:

NGTB45N60S2W/D

NGTB45N60S2WG

IGBT - Inverter Welding

This Insulated Gate Bipolar Transistor (IGBT) features a robust and

cost effective Trench construction, and provides superior performance

in demanding switching applications, offering both low on state

voltage and minimal switching loss. The IGBT is well suited for

welding applications. Incorporated into the device is a soft and fast

co−packaged free wheeling diode with a low forward voltage.

Features

Typical Applications

ABSOLUTE MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector−emitter voltage

600

V

Collector current

°C

°C

90

45

A

180

A

Diode forward current

°C

°C

90

45

A

180

A

Gate−emitter voltage

Transient Gate Emitter Voltage

$20

$30

V

Power Dissipation

°C

°C

300

150

W

Operating junction temperature

range

−55 to +175

°C

Storage temperature range

−55 to +175

°C

Lead temperature for soldering, 1/8”

from case for 5 seconds

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

TO−247

CASE 340AL

C

G

45 A, 600 V

E

Device

Package

Shipping

ORDERING INFORMATION

NGTB45N60S2WG

TO−247

(Pb−Free)

30 Units / Rail

www.onsemi.com

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb−Free Package

MARKING DIAGRAM

45N60S2

AYWWG

G

E

C