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FESE8GT Datasheet(PDF) 1 Page - Vishay Siliconix |
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FESE8GT Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 4 page FESE8AT thru FESE8GT www.vishay.com Vishay General Semiconductor Revision: 30-Jan-13 1 Document Number: 89982 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • High forward surge capability • Low leakage current • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, inverters, freewheeling diodes, DC/DC converters, and other power switching application. MECHANICAL DATA Case: TO-220AC Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commerical grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum PRIMARY CHARACTERISTICS IF(AV) 8.0 A VRRM 50 V to 400 V IFSM 125 A trr 35 ns, 50 ns VF 0.95 V, 1.30 V TJ max. 150 °C CASE PIN 2 PIN 1 TO-220AC FESE8XT MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL FESE8AT FESE8BT FESE8CT FESE8DT FESE8FT FESE8GT UNIT Maximum repetitive peak reverse voltage VRRM 50 100 150 200 300 400 V Maximum RMS voltage VRMS 35 70 105 140 210 280 V Maximum DC blocking voltage VDC 50 100 150 200 300 400 V Maximum average forward rectified current at TC = 100 °C IF(AV) 8.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 125 A Operating storage and temperature range TJ, TSTG - 55 to + 150 °C |
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