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SD106WS Datasheet(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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SD106WS Datasheet(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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1 / 3 page  Production specification Silicon Epitaxial Planar Diode SD106WS B026 www.gmicroelec.com Rev.A 1 FEATURES Low turn-on voltage Fast switching This device is protected by a PN junction guard ring against excessive voltage,such as electrostatic discharge Ideal for precaution of MOS device ,steering ,biasing , and coupling diodes for fast switching and low logic level application Microminiature plastic package SOD-323 APPLICATIONS High speed switching ORDERING INFORMATION Type No. Marking Package Code SD106WS S21 SOD-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Unit Non-Repetitive Peak reverse voltage VRM 30 V Peak forward Current IFM 200 mA Forward surge current @tp=10ms IFSM 1 A Power dissipation Ptot 250 mW Thermal resistance junction to ambient air RθjA 500 ℃ /W Junction temperature Tj 150 ℃ Storage temperature TSTG -65 to +150 ℃ Pb Lead-free |
Similar Part No. - SD106WS_13 |
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Similar Description - SD106WS_13 |
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