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BAT46W Datasheet(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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BAT46W Datasheet(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
2 / 3 page Production specification Schottky Barrier Diode BAT46W A024 www.gmicroelec.com Rev.A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Conditions Min. Typ. Max. Unit Reverse Breakdown Voltage V(BR)R IR=100μA 100 V VF IF=0.1mA 0.25 V VF IF=10mA 0.45 V Forward voltage VF IF=250mA 1.00 V VR=1.5V 0.5 μA VR=1.5V,Tj=60℃ 5.0 μA VR=10V 0.8 μA VR=10V,Tj=60℃ 7.5 μA VR=50V 2.0 μA VR=50V,Tj=60℃ 15 μA VR=75V 5.0 μA Reverse current IR VR=75V,Tj=60℃ 20 μA Capacitance Ctot VR=0V,f=1MHz VR=1V,f=1MHz 10 6 pF |
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