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LP365AN Datasheet(PDF) 2 Page - National Semiconductor (TI) |
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LP365AN Datasheet(HTML) 2 Page - National Semiconductor (TI) |
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2 / 10 page  Absolute Maximum Ratings If MilitaryAerospace specified devices are required please contact the National Semiconductor Sales OfficeDistributors for availability and specifications Supply Voltage 36 VDC or g 18 VDC Differential Input Voltage g 36 VDC Input Voltage (Note 1) b 03V to a36 VDC Output Short Circuit to VE (Note 2) Continuous VOUT with Respect to VE VEb7VsVOUTsVEa36V ESD Tolerance (Note 10) 2000V M Package N Package Power Dissipation (Note 3) 500 mW 500 mW Tj Max 115 C 115 C ijA 115 CW 90 CW Lead Temp (Soldering10 sec) 260 C (Vapor Phase60 sec) 215 C (Infrared15 sec) 220 C Operating Temp Range LP365 0 C s TA s a70 C Storage Temp Range b 40 C s TA s a150 C Electrical Characteristics (Note 4) Low power VSe5V ISETe10 mA LP365A LP365 Symbol Parameter Conditions Tested Design Tested Design Units Typ Limit Limit Typ Limit Limit (Limit) (Note 5) (Note 6) (Note 5) (Note 6) VOS Input Offset VCMeOV 13 6 36 9 mV Voltage RSe100 (Max) IOS Input Offset VCMe0V 2 20 50 425 75 nA Current LP265 425 150 (Max) IB Input Bias VCMe0V 10 50 125 15 75 200 nA Current LP265 15 75 300 (Max) AVOL Large Signal RLe100k 500 50 50 300 25 25 VmV Voltage Gain (Min) VCM Input Common- 0 0 0 0 V Mode Voltage (Max) Range 3 3 3 3 V (Min) CMRR Common-Mode 0sVCMs3V 85 75 70 80 75 70 dB Rejection Ratio (Min) PSRR Supply Voltage g 25VsVS 75 65 65 70 65 65 dB Rejection Ratio s g 35V (Min) IS Supply Current All Inputse0V 215 250 300 225 275 300 m A RLe % (Max) VOH Output Voltage VCe5V V High VEe0V 49 45 49 45 (Min) RLe100k VOL Output Voltage VEe0V 04 04 04 04 V Low (Max) ISINK Output Sink VEe0V 24 12 06 20 08 04 mA Current VOe04V (Min) ILEAK Output Leakage VCe5V 250 5000 2 100 5000 nA Current VEe0V (Max) tR Response Time VCCe5V VEe0V RLe5k 4 4 m s CLe10 pF (Note 7) 2 |
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