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IMBD4148-G Datasheet(PDF) 1 Page - Vishay Siliconix |
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IMBD4148-G Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 5 page IMBD4148-G www.vishay.com Vishay Semiconductors Rev. 1.1, 15-May-13 1 Document Number: 85882 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Small Signal Switching Diode MECHANICAL DATA Case: SOT-23 Weight: approx. 8.1 mg Packaging codes/options: 18/10K per 13” reel (8 mm tape), 10K/box 08/3K per 7” reel (8 mm tape), 15K/box FEATURES • Silicon epitaxial planar diodes • Fast switching diode in case SOT-23, especially suited for automatic insertion. • AEC-Q101 qualified • Base P/N-G3 - green, commercial grade • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Note (1) Device on fiberglass substrate, see layout on next page. 12 3 PARTS TABLE PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS IMBD4148-G IMBD4148-G3-08 or IMBD4148-G3-18 Single diode AH Tape and reel ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage VR 75 V Peak reverse voltage VRM 100 V Rectified current (average) half wave rectification with resist. (1) f 50 Hz IF(AV) 150 mA Surge forward current t < 1 s, Tj = 25 °C IFSM 500 mA Power dissipation (1) up to Tamb = 25 °C Ptot 350 mW THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance junction to ambient air (1) RthJA 450 K/W Junction temperature Tj 150 °C Storage temperature range Tstg - 65 to + 150 °C Operating temperature range Top - 55 to + 150 °C |
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