BAV21W-E3-08 datasheet(2/5 Pages) VISHAY

Part #	BAV21W-E3-08

Description	Small Signal Switching Diodes, High Voltage

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Manufacturer	VISHAY [Vishay Siliconix]

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BAV19W, BAV20W, BAV21W

www.vishay.com

Vishay Semiconductors

Rev. 1.5, 13-May-13

2

Document Number: 85725

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 1 - Forward Current vs. Forward Voltage

Fig. 2 - Admissible Forward Current vs. Ambient Temperature

Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature

Fig. 4 - Dynamic Forward Resistance vs. Forward Current

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

Forward voltage

IF = 100 mA

VF

1V

IF = 200 mA

VF

1.25

V

Leakage current

VR = 100 V

BAV19W

IR

100

nA

VR = 100 V, Tj = 100 °C

BAV19W

IR

15

μA

VR = 150 V

BAV20W

IR

100

nA

VR = 150 V, Tj = 100 °C

BAV20W

IR

15

μA

VR = 200 V

BAV21W

IR

100

nA

VR = 200 V, Tj = 100 °C

BAV21W

IR

15

μA

Dynamic forward

resistance

IF = 10 mA

rf

5



Diode capacitace

VR = 0, f = 1 MHz

CD

1.5

pF

Reverse recovery time

IF = 30 mA, IR = 30 mA,

iR = 3 mA, RL = 100 

trr

50

ns

18858

1000

100

10

1

0.1

0.01

0

0.4

0.6

0.8

1

0.2

VF - Forward Voltage (V)

Tj = 100 °C

25 °C

0.1

0.2

0.3

0

30

60

90

120

150

18859

Tamb - Ambient Temperature (°C)

I

Current (rectif.) O

DC current IF

200

18860

Tamb - Ambient Temperature (°C)

500

400

300

200

100

40

80

120

160

0

10

100

1

100

10

18861

IF - Forward Current (mA)

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