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BAV99RW Datasheet(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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BAV99RW Datasheet(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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2 / 3 page  Production specification Dual series switching diode BAV99RW F007 www.gmicroelec.com Rev.A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN MAX UNIT Reverse breakdown voltage V(BR) I(BR)=100μA 70 V Reverse voltage leakage current IR VR=70V 2.5 μA Forward voltage VF IF=1mA IF=10mA IF=50mA IF=150mA 715 855 1000 1250 mV Diode capacitance CD VR=0V f=1MHz 1.5 pF Reverse recovery time trr 然 IF=IR=10mA RL=100Ω 6.0 nS Forward recovery voltage VFR IF=10mA,tr=20ns 1.75 V TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified |
Similar Part No. - BAV99RW |
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Similar Description - BAV99RW |
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