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TGA4548 Datasheet(PDF) 7 Page - TriQuint Semiconductor |
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TGA4548 Datasheet(HTML) 7 Page - TriQuint Semiconductor |
7 / 11 page TGA4548 17 – 20 GHz 10 W GaN Power Amplifier Data Sheet Rev. A, November 18, 2016 | Subject to change without notice 7 of 11 www.qorvo.com ® Thermal and Reliability Information Parameter Test Conditions Value Units Thermal Resistance (θJC) (1) CW Tbaseplate = +85 °C, VD = +28 V, ID = 300 mA, POUT = 25 dBm, PDISS = 8.4 W 3.57 ºC/W Channel Temperature, TCH (Under RF) 115 °C Median Lifetime (TM) 5.7 x 1011 Hrs Th ermal Resistance (θJC) (1) CW Tbaseplate = +85 °C, VD = +28 V, ID = 1700 mA, POUT = 40 dBm, PDISS = 37.6 W 4.17 ºC/W Channel Temperature, TCH (Under RF) 240 °C Median Lifetime (TM) 2.4 x 106 Hrs Notes: 1. Channel operating temperature will directly affect the device median lifetime (Tm). For maximum life, it is recommended that the channel temperatures be maintained at the lowest possible levels. Median Lifetime Test Conditions: VD = +28 V; Failure Criteria is 10% reduction in ID_MAX 1E+04 1E+05 1E+06 1E+07 1E+08 1E+09 1E+10 1E+11 1E+12 1E+13 1E+14 1E+15 75 100 125 150 175 200 225 250 275 Channel Temperature, TCH (C) Median Lifetime vs. TCH FET16 |
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