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RB731XN Datasheet(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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RB731XN Datasheet(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
2 / 3 page Production specification Surface Mount Schottky Barrier Diodes RB731XN G021 www.gmicroelec.com Rev.A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN MAX UNIT Reverse breakdown voltage V(BR)R IR=100μA 40 - V Average reverse current IR VR=10V 1 μA Forward voltage VF IF=1mA - 0.37 V Total Capacitance CT VR=1.0V,f=1.0MHz - 2 pF TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified |
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