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MMBD6050LT1G Datasheet(PDF) 2 Page - ON Semiconductor |
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MMBD6050LT1G Datasheet(HTML) 2 Page - ON Semiconductor |
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2 / 3 page  MMBD6050LT1G www.onsemi.com 2 Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr +10 V 2.0 k 820 W 0.1 mF DUT VR 100 mH 0.1 mF 50 W OUTPUT PULSE GENERATOR 50 W INPUT SAMPLING OSCILLOSCOPE tr tp t 10% 90% IF IR trr t iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) IF INPUT SIGNAL Figure 1. Recovery Time Equivalent Test Circuit TYPICAL CHARACTERISTICS Figure 2. Forward Voltage VF, FORWARD VOLTAGE (VOLTS) 1.0 10 100 0.1 Figure 3. Leakage Current VR, REVERSE VOLTAGE (VOLTS) 10 0 1.0 0.1 0.001 0.01 10 20 30 40 50 1.0 1.2 0.2 0.4 0.6 0.8 Figure 4. Capacitance VR, REVERSE VOLTAGE (VOLTS) 0 0.68 0.64 0.60 0.52 0.56 2.0 4.0 6.0 8.0 TA = 85°C TA = -40°C TA = 25°C TA = 25°C TA = 55°C TA = 85°C TA = 150°C TA = 125°C |
Similar Part No. - MMBD6050LT1G_16 |
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Similar Description - MMBD6050LT1G_16 |
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