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NTB27N06T4 Datasheet(PDF) 2 Page - ON Semiconductor |
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NTB27N06T4 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 12 page NTP27N06, NTB27N06 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (Note 1.) (VGS = 0 Vdc, ID = 250 µAdc) Temperature Coefficient (Positive) V(BR)DSS 60 – 70 79.4 – – Vdc mV/ °C Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C) IDSS – – – – 1.0 10 µAdc Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) IGSS – – ±100 nAdc ON CHARACTERISTICS (Note 1.) Gate Threshold Voltage (Note 1.) (VDS = VGS, ID = 250 µAdc) Threshold Temperature Coefficient (Negative) VGS(th) 2.0 – 2.8 6.9 4.0 – Vdc mV/ °C Static Drain–to–Source On–Resistance (Note 1.) (VGS = 10 Vdc, ID = 13.5 Adc) RDS(on) – 37.5 46 m W Static Drain–to–Source On–Resistance (Note 1.) (VGS = 10 Vdc, ID = 27 Adc) (VGS = 10 Vdc, ID = 13.5 Adc, TJ = 150°C) VDS(on) – – 1.05 2.12 1.5 – Vdc Forward Transconductance (Note 1.) (VDS = 7.0 Vdc, ID = 6.0 Adc) gFS – 13.2 – mhos DYNAMIC CHARACTERISTICS Input Capacitance (V 25 Vd V 0 Vd Ciss – 725 1015 pF Output Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Coss – 213 300 Transfer Capacitance f = 1.0 MHz) Crss – 58 120 SWITCHING CHARACTERISTICS (Note 2.) Turn–On Delay Time td(on) – 13.6 30 ns Rise Time (VDD = 30 Vdc, ID = 27 Adc, VGS =10Vdc tr – 62.7 125 Turn–Off Delay Time VGS = 10 Vdc, RG = 9.1 Ω) (Note 1.) td(off) – 26.6 60 Fall Time RG 9.1 Ω) (Note 1.) tf – 70.4 140 Gate Charge (V 48 Vd I 27 Ad QT – 21.2 30 nC (VDS = 48 Vdc, ID = 27 Adc, VGS = 10 Vdc) (Note 1.) Q1 – 5.6 – VGS = 10 Vdc) (Note 1.) Q2 – 7.3 – SOURCE–DRAIN DIODE CHARACTERISTICS Forward On–Voltage (IS = 27 Adc, VGS = 0 Vdc) (Note 1.) (IS = 27 Adc, VGS = 0 Vdc, TJ = 150°C) VSD – – 1.05 0.93 1.25 – Vdc Reverse Recovery Time (I 27 Ad V 0 Vd trr – 42 – ns (IS = 27 Adc, VGS = 0 Vdc, dIS/dt = 100 A/µs) (Note 1.) ta – 26 – dIS/dt = 100 A/µs) (Note 1.) tb – 16 – Reverse Recovery Stored Charge QRR – 0.07 – µc 1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature. |
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