Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.COM

X  

NTB27N06T4 Datasheet(PDF) 2 Page - ON Semiconductor

Part # NTB27N06T4
Description  Power MOSFET 27 Amps, 60 Volts N-Channel TO-220 and D2PAK
Download  12 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NTB27N06T4 Datasheet(HTML) 2 Page - ON Semiconductor

  NTB27N06T4 Datasheet HTML 1Page - ON Semiconductor NTB27N06T4 Datasheet HTML 2Page - ON Semiconductor NTB27N06T4 Datasheet HTML 3Page - ON Semiconductor NTB27N06T4 Datasheet HTML 4Page - ON Semiconductor NTB27N06T4 Datasheet HTML 5Page - ON Semiconductor NTB27N06T4 Datasheet HTML 6Page - ON Semiconductor NTB27N06T4 Datasheet HTML 7Page - ON Semiconductor NTB27N06T4 Datasheet HTML 8Page - ON Semiconductor NTB27N06T4 Datasheet HTML 9Page - ON Semiconductor Next Button
Zoom Inzoom in Zoom Outzoom out
 2 / 12 page
background image
NTP27N06, NTB27N06
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage (Note 1.)
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
V(BR)DSS
60
70
79.4
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
IDSS
1.0
10
µAdc
Gate–Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc)
IGSS
±100
nAdc
ON CHARACTERISTICS (Note 1.)
Gate Threshold Voltage (Note 1.)
(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
2.0
2.8
6.9
4.0
Vdc
mV/
°C
Static Drain–to–Source On–Resistance (Note 1.)
(VGS = 10 Vdc, ID = 13.5 Adc)
RDS(on)
37.5
46
m
W
Static Drain–to–Source On–Resistance (Note 1.)
(VGS = 10 Vdc, ID = 27 Adc)
(VGS = 10 Vdc, ID = 13.5 Adc, TJ = 150°C)
VDS(on)
1.05
2.12
1.5
Vdc
Forward Transconductance (Note 1.) (VDS = 7.0 Vdc, ID = 6.0 Adc)
gFS
13.2
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vd
V
0 Vd
Ciss
725
1015
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
213
300
Transfer Capacitance
f = 1.0 MHz)
Crss
58
120
SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time
td(on)
13.6
30
ns
Rise Time
(VDD = 30 Vdc, ID = 27 Adc,
VGS =10Vdc
tr
62.7
125
Turn–Off Delay Time
VGS = 10 Vdc,
RG = 9.1 Ω) (Note 1.)
td(off)
26.6
60
Fall Time
RG 9.1 Ω) (Note 1.)
tf
70.4
140
Gate Charge
(V
48 Vd
I
27 Ad
QT
21.2
30
nC
(VDS = 48 Vdc, ID = 27 Adc,
VGS = 10 Vdc) (Note 1.)
Q1
5.6
VGS = 10 Vdc) (Note 1.)
Q2
7.3
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 27 Adc, VGS = 0 Vdc) (Note 1.)
(IS = 27 Adc, VGS = 0 Vdc, TJ = 150°C)
VSD
1.05
0.93
1.25
Vdc
Reverse Recovery Time
(I
27 Ad
V
0 Vd
trr
42
ns
(IS = 27 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs) (Note 1.)
ta
26
dIS/dt = 100 A/µs) (Note 1.)
tb
16
Reverse Recovery Stored Charge
QRR
0.07
µc
1. Pulse Test: Pulse Width
≤ 300 µs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.


Similar Part No. - NTB27N06T4

ManufacturerPart #DatasheetDescription
logo
ON Semiconductor
NTB22N06 ONSEMI-NTB22N06 Datasheet
200Kb / 7P
   N?묬hannel Enhancement?묺ode Silicon Gate
August, 2006 ??Rev. 2
NTB22N06L ONSEMI-NTB22N06L Datasheet
200Kb / 7P
   N?묬hannel Power MOSFET
August, 2006 ??Rev. 2
NTB22N06LT4 ONSEMI-NTB22N06LT4 Datasheet
200Kb / 7P
   N?묬hannel Power MOSFET
August, 2006 ??Rev. 2
NTB22N06T4 ONSEMI-NTB22N06T4 Datasheet
200Kb / 7P
   N?묬hannel Enhancement?묺ode Silicon Gate
August, 2006 ??Rev. 2
NTB23N03R ONSEMI-NTB23N03R Datasheet
63Kb / 6P
   Power MOSFET 23 Amps, 25 Volts N?묬hannel D2PAK
August, 2005 ??Rev. 2
More results

Similar Description - NTB27N06T4

ManufacturerPart #DatasheetDescription
logo
ON Semiconductor
NTB5412N ONSEMI-NTB5412N Datasheet
123Kb / 7P
   Power MOSFET 60 Amps, 60 Volts N-Channel D2PAK, TO-220
November, 2008 ??Rev. 1
NTP75N06 ONSEMI-NTP75N06_V01 Datasheet
176Kb / 9P
   Power MOSFET 75 Amps, 60 Volts, N−Channel TO−220 and D2PAK
December, 2012 - Rev. 3
NTB5426N ONSEMI-NTB5426N Datasheet
118Kb / 7P
   Power MOSFET 120 Amps, 60 Volts N-Channel D2PAK, TO-220
November, 2008 ??Rev. 0
NTP5426NG ONSEMI-NTP5426NG Datasheet
136Kb / 7P
   Power MOSFET 120 Amps, 60 Volts N-Channel D2PAK, TO-220
October, 2011 ??Rev. 1
NTB5411N ONSEMI-NTB5411N Datasheet
148Kb / 7P
   Power MOSFET 80 Amps, 60 Volts N-Channel D2PAK, TO-220
October, 2009 ??Rev. 2
NTB75N03R ONSEMI-NTB75N03R Datasheet
73Kb / 8P
   Power MOSFET 75 Amps, 25 Volts N-Channel D2PAK, TO-220
October, 2003 ??Rev. 2
NTP27N06L ONSEMI-NTP27N06L Datasheet
66Kb / 8P
   Power MOSFET 27 Amps, 60 Volts
January, 2005 ??Rev. 3
NTBV45N06 ONSEMI-NTBV45N06 Datasheet
66Kb / 8P
   Power MOSFET 45 Amps, 60 Volts N?밅hannel TO??20 and D2PAK
March, 2001 ??Rev. 0
NTB45N06T4G ONSEMI-NTB45N06T4G Datasheet
66Kb / 8P
   Power MOSFET 45 Amps, 60 Volts N?밅hannel TO??20 and D2PAK
March, 2001 ??Rev. 0
NTB45N06G ONSEMI-NTB45N06G Datasheet
86Kb / 7P
   Power MOSFET 45 Amps, 60 Volts N?묬hannel TO??20 and D2PAK
August, 2005 ??Rev. 1
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com