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MIC94050 Datasheet(PDF) 2 Page - Micrel Semiconductor |
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MIC94050 Datasheet(HTML) 2 Page - Micrel Semiconductor |
2 / 5 page MIC94050/94051 Micrel MIC94050/94051 2 July 2002 Electrical Characteristics (Note 1) Symbol Parameter Condition (Note 1) Min Typ Max Units V GS Gate Threshold Voltage V DS = VGS, ID = –250µA 0.5 1.2 V I GSS Gate-Body Leakage V DS = 0V, VGS = –4.5V, Note 2, Note 3 1 µA R GS Gate-Source Resistance V DS = 0V, VGS = –4.5V, Note 2, Note 4 200 350 500 k Ω C ISS Input Capacitance V GS = 0V, VDS = –5.5V 600 pF I DSS Zero Gate Voltage Drain Current V DS = –5.5V, VGS = 0V 1 µA V DS = –5.5V, VGS = 0V, TJ = 85°C5 µA R DS(ON) Drain-Source On-Resistance V GS = –4.5V, ID = –100mA 0.125 0.160 Ω V GS = –3.6V, ID = –100mA 0.135 0.180 Ω V GS = –2.5V, ID = –100mA 0.165 0.200 Ω V GS = –1.8V, ID = –100mA 0.225 0.280 Ω g FS Forward Transconductance V DS = –5.5V, ID = –200mA, Note 5 3S Note 1. T A = 25°C unless noted. Substrate connected to source for all conditions. Note 2. ESD gate protection diode conducts during positive gate-to-source voltage excursions. IC devices are inherently ESD sensitive. Handling precautions required Note 3. MIC94050 only. Note 4. MIC94051 only. Note 5. Pulse Test: Pulse Width ≤ 80µs, Duty Cycle ≤ 0.5%. Absolute Maximum Ratings Drain-to-Source Voltage ................................................ –6V Gate-to-Source Voltage ................................................ –6V Continuous Drain Current T A = 25°C (VGS = 4.5V) ............................................ 1.8A T A = 100°C (VGS = 4.5V) .......................................... 1.2A Total Power Dissipation T A = 25°C ............................................................ 568mW T A = 100°C .......................................................... 227mW Operating Junction Temperature ............. –40 °C to +150°C Storage Temperature ............................... –55 °C to +150°C ESD Rating, Note 2 Operating Ratings Thermal Resistance θ JA ...................................................................................... 220°C/W θ JC ..................................................................................... 130°C/W |
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