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LM5101M Datasheet(PDF) 10 Page - National Semiconductor (TI) |
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LM5101M Datasheet(HTML) 10 Page - National Semiconductor (TI) |
10 / 12 page Power Dissipation Considerations (Continued) The bootstrap diode power loss is the sum of the forward bias power loss that occurs while charging the bootstrap capacitor and the reverse bias power loss that occurs during reverse recovery. Since each of these events happens once per cycle, the diode power loss is proportional to frequency. Larger capacitive loads require more current to recharge the bootstrap capacitor resulting in more losses. Higher input voltages (V IN) to the half bridge result in higher reverse recovery losses. The following plot was generated based on calculations and lab measurements of the diode recovery time and current under several operating conditions. This can be useful for approximating the diode power dissipation. Diode Power Dissipation V IN = 80V 20088806 Diode Power Dissipation V IN = 40V 20088807 The total IC power dissipation can be estimated from the previous plots by summing the gate drive losses with the bootstrap diode losses for the intended application. Because the diode losses can be significant, an external diode placed in parallel (refer to Figure 4) with the internal bootstrap diode can be helpful in removing power from the IC. For this to be effective, the external diode must be placed close to the IC to minimize series inductance and have a significantly lower forward voltage drop than the internal diode. 20088808 FIGURE 4. LM5101 Driving MOSFETs Connected in Half-Bridge Configuration www.national.com 10 |
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