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IRG4IBC20KD Datasheet(PDF) 5 Page - International Rectifier

Part No. IRG4IBC20KD
Description  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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 5 page
background image
IRG4IBC20KD
www.irf.com
5
0
10
20
30
40
50
0.5
0.6
0.7
0.8
R
, Gate Resistance (Ohm)
G

V
= 480V
V
= 15V
T
= 25 C
I
= 9.0A
CC
GE
J
C
°
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
0
10
20
30
40
0
4
8
12
16
20
Q , Total Gate Charge (nC)
G

V
= 400V
I
= 9.0A
CC
C
1
10
100
0
200
400
600
800
V
, Collector-to-Emitter Voltage (V)
CE

V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C
SHORTED
GE
ies
ge
gc ,
ce
res
gc
oes
ce
gc

Cies

Coes

Cres
RG , Gate Resistance ( Ω )
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.1
1
10
T , Junction Temperature ( C )
J
°

R
= Ohm
V
= 15V
V
= 480V
G
GE
CC

I =
A
18
C

I =
A
9
C

I =
A
4.5
C
50
9.0A




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