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HAL535UA-E Datasheet(PDF) 8 Page - List of Unclassifed Manufacturers |
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HAL535UA-E Datasheet(HTML) 8 Page - List of Unclassifed Manufacturers |
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8 / 21 page  HAL525, HAL535 8 Micronas 3.6. Electrical Characteristics at TJ = −40 °C to +170 °C , VDD = 3.8 V to 24 V, as not otherwise specified in Conditions. Typical Characteristics for TJ = 25 °C and VDD = 12 V Fig. 3–3: Recommended pad size SOT-89B Dimensions in mm Symbol Parameter Pin No. Min. Typ. Max. Unit Conditions IDD Supply Current 1 2.3 3 4.2 mA TJ = 25 °C IDD Supply Current over Temperature Range 1 1.6 3 5.2 mA VDDZ Overvoltage Protection at Supply 1 − 28.5 32 V IDD = 25 mA, TJ = 25 °C, t = 20 ms VOZ Overvoltage Protection at Output 3 − 28 32 V IOH = 25 mA, TJ = 25 °C, t = 20 ms VOL Output Voltage 3 − 130 280 mV IOL = 20 mA, TJ = 25 °C VOL Output Voltage over Temperature Range 3 − 130 400 mV IOL = 20 mA IOH Output Leakage Current 3 − 0.06 0.1 µA Output switched off, TJ = 25 °C, VOH = 3.8 to 24 V IOH Output Leakage Current over Temperature Range 3 −− 10 µA Output switched off, TJ ≤150 °C, VOH = 3.8 to 24V fosc Internal Oscillator Chopper Frequency − 95 115 − kHz TJ = 25 °C, fosc Internal Oscillator Chopper Frequency over Temperature Range − 85 115 − kHz TJ = −30 °C to 100 °C fosc Internal Oscillator Chopper Frequency over Temperature Range − 73 115 − kHz ten(O) Enable Time of Output after Setting of VDD 1 − 30 70 µsV DD = 12 V B > BON + 2 mT or B < BOFF − 2 mT tr Output Rise Time 3 − 75 400 ns VDD = 12 V, RL = 820 Ohm, CL = 20 pF tf Output Fall Time 3 − 50 400 ns RthJSB case SOT-89B Thermal Resistance Junction to Substrate Backside −− 150 200 K/W Fiberglass Substrate 30 mm x 10 mm x 1.5 mm, pad size (see Fig. 3–3) RthJA case TO-92UA Thermal Resistance Junction to Soldering Point −− 150 200 K/W 5.0 2.0 2.0 1.0 |
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