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LMV7251M5 Datasheet(PDF) 4 Page - National Semiconductor (TI) |
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LMV7251M5 Datasheet(HTML) 4 Page - National Semiconductor (TI) |
4 / 11 page 5V Electrical Characteristics Unless otherwise specified, all limits guaranteed for T J = 25˚C, V + = 5V, V− = 0V. Boldface limits apply at the temperature ex- tremes. Symbol Parameter Conditions Typ (Note 5) Limits (Note 6) Units V OS Input Offset Voltage 0.03 6 8 mV max TC V OS Input Offset Average Drift V CM = 2.5V (Note 7) 10 µV/C I B Input Bias Current 16 nA I OS Input Offset Current 220 pA I S Supply Current 12 20 25 µA max I SC Output Short Circuit Current Sourcing, V O = 2.5V (LMV7251 only) 82 50 mA min Sinking, V O = 2.5V 78 50 I LEAKAGE Output Leakage Current V O = 5V, (LMV7255 only) 375 pA V OH Output Voltage High I O = 4mA 4.9 4.82 V min V OL Output Voltage Low I O = −4mA 90 180 mV max Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics. Note 2: Human body model, 1.5k Ω in series with 100pF. Note 3: The maximum power dissipation is a function of TJ(max), θJA, and TA. The maximum allowable power dissipation at any ambient temperature is PD =(TJ(max) -TA)/θJA. All numbers apply for packages soldered directly into a PC board. Note 4: Typical values represent the most likely parametric norm. Note 5: All limits are guaranteed by testing or statistical analysis. Note 6: Machine Model, 0 Ω in series with 200pF. Note 7: Offset Voltage average drift determined by dividing the change in VOS at temperature extremes into the total temperature change. www.national.com 4 |
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