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HAL525 Datasheet(PDF) 5 Page - List of Unclassifed Manufacturers |
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HAL525 Datasheet(HTML) 5 Page - List of Unclassifed Manufacturers |
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5 / 21 page  HAL525, HAL535 Micronas 5 2. Functional Description The Hall effect sensor is a monolithic integrated circuit that switches in response to magnetic fields. If a mag- netic field with flux lines perpendicular to the sensitive area is applied to the sensor, the biased Hall plate forces a Hall voltage proportional to this field. The Hall voltage is compared with the actual threshold level in the comparator. The temperature-dependent bias increases the supply voltage of the Hall plates and adjusts the switching points to the decreasing induc- tion of magnets at higher temperatures. If the magnetic field exceeds the threshold levels, the open drain out- put switches to the appropriate state. The built-in hys- teresis eliminates oscillation and provides switching behavior of output without bouncing. Magnetic offset caused by mechanical stress is com- pensated for by using the “switching offset compensa- tion technique”. Therefore, an internal oscillator pro- vides a two phase clock. The Hall voltage is sampled at the end of the first phase. At the end of the second phase, both sampled and actual Hall voltages are averaged and compared with the actual switching point. Subsequently, the open drain output switches to the appropriate state. The time from crossing the mag- netic switching level to switching of output can vary between zero and 1/fosc. Shunt protection devices clamp voltage peaks at the Output-pin and VDD-pin together with external series resistors. Reverse current is limited at the VDD-pin by an internal series resistor up to −15 V. No external reverse protection diode is needed at the VDD-pin for reverse voltages ranging from 0 V to −15 V. Fig. 2–1: HAL525, HAL 535 block diagram Fig. 2–2: Timing diagram Reverse Voltage & Overvoltage Protection Temperature Dependent Bias Hysteresis Control Short Circuit and Overvoltage Hall Plate Switch Comparator Output Clock Protection 3 OUT GND 2 1 VDD t VOL VOUT 1/fosc = 9 µs VOH B BON fosc t t tf t IDD t |
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