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SQJB40EP Datasheet(PDF) 1 Page - Vishay Siliconix

Part # SQJB40EP
Description  Automotive Dual N-Channel 40 V (D-S) 175 °C MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SQJB40EP Datasheet(HTML) 1 Page - Vishay Siliconix

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SQJB40EP
www.vishay.com
Vishay Siliconix
S16-2062-Rev. A, 03-Oct-16
1
Document Number: 68550
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive Dual N-Channel 40 V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Package limited.
b. Pulse test; pulse width
 300 μs, duty cycle  2 %.
c. When mounted on 1" square PCB (FR4 material).
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
PRODUCT SUMMARY
VDS (V)
40
RDS(on) () at VGS = 10 V
0.008
RDS(on) () at VGS = 4.5 V
0.011
ID (A) per leg
30
Configuration
Dual
Package
PowerPAK SO-8L
PowerPAK® SO-8L Dual
Top View
1
6.15
mm
5.13
m
m
1
6.15
m
m
5.13
m
m
Bottom View
2
G
1
3
S
2
4
G
2
1
S
1
D2
D1
N-Channel MOSFET
D1
G1
S1
N-Channel MOSFET
D2
G2
S2
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
40
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
TC = 25 °C a
ID
30
A
TC = 125 °C
29
Continuous Source Current (Diode Conduction) a
IS
30
Pulsed Drain Current b
IDM
80
Single Pulse Avalanche Current
L = 0.1 mH
IAS
22
Single Pulse Avalanche Energy
EAS
24
mJ
Maximum Power Dissipation b
TC = 25 °C
PD
34
W
TC = 125 °C
11
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to +175
°C
Soldering Recommendations (Peak Temperature) d, e
260
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Junction-to-Ambient
PCB Mount c
RthJA
85
°C/W
Junction-to-Case (Drain)
RthJC
4.3


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