SBAV99LT3G datasheet(2/3 Pages) ONSEMI

Part #	SBAV99LT3G

Description	Dual Series Switching Diode

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Manufacturer	ONSEMI [ON Semiconductor]

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OFF CHARACTERISTICS (TA = 25°C unless otherwise noted) (Each Diode)

Characteristic

Symbol

Min

Max

Unit

Reverse Breakdown Voltage,

(I(BR) = 100 mA)

V(BR)

100

−

Vdc

Reverse Voltage Leakage Current,

(VR = 100 Vdc)

(VR = 25 Vdc, TJ = 150°C)

(VR = 70 Vdc, TJ = 150°C)

IR

−

1.0

30

50

mAdc

Diode Capacitance,

(VR = 0, f = 1.0 MHz)

CD

−

1.5

pF

Forward Voltage,

(IF = 1.0 mAdc)

(IF = 10 mAdc)

(IF = 50 mAdc)

(IF = 150 mAdc)

VF

−

715

855

1000

1250

mVdc

Reverse Recovery Time,

(IF = IR = 10 mAdc, iR(REC) = 1.0 mAdc) RL = 100 W

trr

−

6.0

ns

Forward Recovery Voltage,

(IF = 10 mA, tr = 20 ns)

VFR

−

1.75

V

CURVES APPLICABLE TO EACH DIODE

VF, FORWARD VOLTAGE (V)

VR, REVERSE VOLTAGE (V)

Figure 1. Forward Voltage

Figure 2. Leakage Current

Figure 3. Capacitance

0.1

1

10

100

1000

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

TA = 85°C

TA = 55°C

TA = 25°C

TA = −40°C

TA = −55°C

TA = 150°C

TA = 125°C

0.001

0.01

0.1

1.0

10

100

0

1020304050

60

70

TA = 85°C

TA = 55°C

TA = 125°C

TA = 150°C

TA = 25°C

0.45

0.47

0.49

0.51

0.53

0.55

0.57

0.59

0.61

012345678

VR, REVERSE VOLTAGE (V)

0

1.1 1.2

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