BAV70LT3G datasheet(2/4 Pages) ONSEMI

Part #	BAV70LT3G

Description	Dual Switching Diode Common Cathode

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Manufacturer	ONSEMI [ON Semiconductor]

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BAV70L, SBAV70L

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Each Diode)

Characteristic

Symbol

Min

Max

Unit

Reverse Breakdown Voltage

(I(BR) = 100 mA)

V(BR)

100

−

V

Reverse Voltage Leakage Current (Note 3)

(VR = 25 V, TJ = 150°C)

(VR = 100 V)

(VR = 70 V, TJ = 150°C)

IR

−

60

1.0

100

mA

Diode Capacitance

(VR = 0 V, f = 1.0 MHz)

CD

−

1.5

pF

Forward Voltage

(IF = 1.0 mA)

(IF = 10 mA)

(IF = 50 mA)

(IF = 150 mA)

VF

−

715

855

1000

1250

mV

Reverse Recovery Time

RL = 100 W

(IF = IR = 10 mA, IR(REC) = 1.0 mA) (Figure 1)

trr

−

6.0

ns

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. For each individual diode while second diode is unbiased.

Notes: 1. A 2.0 k

W variable resistor adjusted for a Forward Current (IF) of 10 mA.

Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.

Notes: 3. tp » trr

+10 V

2.0 k

820

W

0.1

mF

D.U.T.

VR

100

mH

0.1

mF

50

W OUTPUT

PULSE

GENERATOR

50

W INPUT

SAMPLING

OSCILLOSCOPE

tr

tp

t

10%

90%

IF

IR

trr

t

iR(REC) = 1.0 mA

OUTPUT PULSE

(IF = IR = 10 mA; MEASURED

at iR(REC) = 1.0 mA)

IF

INPUT SIGNAL

Figure 1. Recovery Time Equivalent Test Circuit

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