BAV23CL, NSVBAV23CL

www.onsemi.com

2

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

SINGLE HEATED

Derate above 25°C

265

2.1

mW

mW/°C

Thermal Resistance, Junction−to−Ambient (Note 1)

472

°C/W

Thermal Reference, Junction−to−Anode Lead (Note 1)

263

°C/W

Thermal Reference, Junction−to−Case (Note 1)

289

°C/W

Derate above 25°C

345

2.7

mW

mW/°C

Thermal Resistance, Junction−to−Ambient (Note 2)

362

°C/W

Thermal Reference, Junction−to−Anode Lead (Note 2)

251

°C/W

Thermal Reference, Junction−to−Case (Note 2)

250

°C/W

DUAL HEATED (Note 3)

Derate above 25°C

390

3.1

mW

mW/°C

Thermal Resistance, Junction−to−Ambient (Note 1)

321

°C/W

Thermal Reference, Junction−to−Anode Lead (Note 1)

159

°C/W

Thermal Reference, Junction−to−Case (Note 1)

138

°C/W

Derate above 25°C

540

4.3

mW

mW/°C

Thermal Resistance, Junction−to−Ambient (Note 2)

231

°C/W

Thermal Reference, Junction−to−Anode Lead (Note 2)

148

°C/W

Thermal Reference, Junction−to−Case (Note 2)

119

°C/W

Junction and Storage Temperature Range

−55 to +150

°C

3. Dual heated values assume total power is sum of two equally powered channels

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Reverse Voltage Leakage Current

−

−

0.1

100

mAdc

Reverse Breakdown Voltage

250

−

Vdc

Forward Voltage

−

−

1000

1250

mV

Diode Capacitance

−

5.0

pF

Reverse Recovery Time

−

150

ns

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.