©2003 Fairchild Semiconductor Corporation

Rev. A, October 2003

FQB8N60C / FQI8N60C

600V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switched mode power supplies,

active power factor correction, electronic lamp ballasts

based on half bridge topology.

Features

• Low gate charge ( typical 28 nC)

• Low Crss ( typical 12 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Thermal Characteristics

* When mounted on the minimum pad size recommended (PCB Mount)

Symbol

Parameter

FQB8N60C / FQI8N60C

Units

Drain-Source Voltage

600

V

Drain Current

7.5

A

4.6

A

Drain Current

- Pulsed

(Note 1)

30

A

Gate-Source Voltage

± 30

V

Single Pulsed Avalanche Energy

(Note 2)

230

mJ

Avalanche Current

(Note 1)

7.5

A

Repetitive Avalanche Energy

(Note 1)

14.7

mJ

dv/dt

Peak Diode Recovery dv/dt

(Note 3)

4.5

V/ns

3.13

W

147

W

- Derate above 25°C

1.18

W/°C

Operating and Storage Temperature Range

-55 to +150

°C

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

300

°C

Symbol

Parameter

Typ

Max

Units

Thermal Resistance, Junction-to-Case

--

0.85

°C/W

Thermal Resistance, Junction-to-Ambient*

--

40

°C/W

Thermal Resistance, Junction-to-Ambient

--

62.5

°C/W

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S

D

G

FQB Series

FQI Series

GS

D

GS

D