Part Name
         Description
ESDALC6V1P6

 QUAD LOW CAPACITANCE TRANSIL TM ARRAY FOR ESD PROTECTION ( 10 Page)


STMICROELECTRONICS
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ESDALC6V1P6
2/10
®
ABSOLUTE RATING (Tamb = 25°C)
THERMAL RESISTANCES
ELECTRICAL CHARACTERISTICS (Tamb = 25°C)
Symbol
Parameter
Value
Unit
VPP
ESD discharge
IEC61000-4-2 air discharge
IEC61000-4-2 contact discharge
± 15
± 8
kV
PPP
Peak pulse power (8/20µs) (see note 1)
Tj initial = Tamb
30
W
Tj
Junction temperature
125
°C
Tstg
Storage temperature range
-55 to +150
°C
TL
Maximum lead temperature for soldering during 10 s at 5mm for case
260
°C
Top
Operating temperature range
-40 to +125
°C
Note 1: for a surge greater than the maximum values, the diode will fail in short-circuit.
Symbol
Parameter
Value
Unit
Rth(j-a)
Junction to ambient on printed circuit on recommended pad layout
220
°C/W
Symbol
Parameter
VRM
Stand-off voltage
VBR
Breakdown voltage
VCL
Clamping voltage
IRM
Leakage current
IPP
Peak pulse current
αT
Voltage temperature coefficient
VF
Forward voltage drop
C
Capacitance
Rd
Dynamic resistance
Part Number
VBR
@ IR
IRM @ VRM
Rd
αTC
min.
max.
max.
typ.
max.
typ.
@ 0V
VV
mA
µA
V
10-4/°C
pF
ESDALC6V1P6
6.1
7.2
1
0.5
3
1.5
4.5
12
V
I
VCLVBR
VRM
IF
VF
IRM
IPP
Slope: 1/Rd



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