MBRM110LT1G, NRVBM110LT1G, NRVBM110LT3G

http://onsemi.com

2

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

10

V

Average Rectified Forward Current

1.0

A

Non−Repetitive Peak Surge Current

(Non−Repetitive peak surge current, halfwave, single phase, 60 Hz)

50

A

Storage Temperature

−55 to 125

C

Operating Junction Temperature

−55 to 125

C

Voltage Rate of Change

dv/dt

10,000

V/ms

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction−to−Lead (Anode) (Note 1)

Thermal Resistance, Junction−to−Tab (Cathode) (Note 1)

Thermal Resistance, Junction−to−Ambient (Note 1)

35

23

277

C/W

1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 8 and 9.

ELECTRICAL CHARACTERISTICS

Characteristic

Symbol

Value

Unit

Maximum Instantaneous Forward Voltage (Note 2)

V

0.280

0.365

0.415

0.175

0.275

0.325

Maximum Instantaneous Reverse Current (Note 2)

mA

0.2

0.5

30

60

2. Pulse Test: Pulse Width  250 ms, Duty Cycle  2%.

Figure 1. Typical Forward Voltage

Figure 2. Maximum Forward Voltage

10

1

0.1

0.3

0.1

0.2

0.4

0.6

0.5

0.7

100C

75C

25C

−55C

10

1

0.1

0.3

0.1

0.2

0.4

0.6

0.5

0.7

100C

75C

25C

−55C