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MMSD301T1G Datasheet(PDF) 2 Page - ON Semiconductor |
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MMSD301T1G Datasheet(HTML) 2 Page - ON Semiconductor |
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2 / 5 page  MMSD301T1G, SMMSD301T1G, MMSD701T1G, SMMSD701T1G, http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage (IR = 10 mA) MMSD301T1G, SMMSD301T1G MMSD701T1G, SMMSD701T1G V(BR)R 30 70 − − − − V Diode Capacitance (VR = 0 V, f = 1.0 MHz) MMSD301T1G, SMMSD301T1G MMSD701T1G, SMMSD701T1G CT − − 0.9 0.5 1.5 1.0 pF Total Capacitance (VR = 15 V, f = 1.0 MHz) MMSD301T1G, SMMSD301T1G (VR = 20 V, f = 1.0 MHz) MMSD701T1G, SMMSD701T1G CT − − 0.9 0.5 1.5 1.0 pF Reverse Leakage (VR = 25 V) MMSD301T1G, SMMSD301T1G (VR = 35 V) MMSD701T1G, SMMSD701T1G IR − − 13 9.0 200 200 nAdc Forward Voltage (IF = 1.0 mAdc) MMSD301T1G, SMMSD301T1G (IF = 10 mA) (IF = 1.0 mAdc) MMSD701T1G, SMMSD701T1G (IF = 10 mA) VF − − − − 0.38 0.52 0.42 0.7 0.45 0.6 0.5 1.0 Vdc |
Similar Part No. - MMSD301T1G_11 |
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Similar Description - MMSD301T1G_11 |
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