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NRVBB3030CTLT4G Datasheet(PDF) 5 Page - ON Semiconductor |
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NRVBB3030CTLT4G Datasheet(HTML) 5 Page - ON Semiconductor |
5 / 9 page MBRB3030CTLG, NRVBB3030CTLG http://onsemi.com 5 Modeling Reverse Energy Characteristics of Power Rectifiers ABSTRACT Power semiconductor rectifiers are used in a variety of applications where the reverse energy requirements often vary dramatically based on the operating conditions of the application circuit. A characterization method was devised using the Unclamped Inductive Surge (UIS) test technique. By testing at only a few different operating conditions (i.e. different inductor sizes) a safe operating range can be established for a device. A relationship between peak avalanche current and inductor discharge time was established. Using this relationship and circuit parameters, the part applicability can be determined. This technique offers a power supply designer the total operating conditions for a device as opposed to the present single−data−point approach. INTRODUCTION In today’s modern power supplies, converters and other switching circuitry, large voltage spikes due to parasitic inductance can propagate throughout the circuit, resulting in catastrophic device failures. Concurrent with this, in an effort to provide low−loss power rectifiers, i.e., devices with lower forward voltage drops, Schottky technology is being applied to devices used in this switching power circuitry. This technology lends itself to lower reverse breakdown voltages. This combination of high voltage spikes and low reverse breakdown voltage devices can lead to reverse energy destruction of power rectifiers in their applications. This phenomena, however, is not limited to just Schottky technology. In order to meet the challenges of these situations, power semiconductor manufacturers attempt to characterize their devices with respect to reverse energy robustness. The typical reverse energy specification, if provided at all, is usually given as energy−to−failure (mJ) with a particular inductor specified for the UIS test circuit. Sometimes the peak reverse test current is also specified. Practically all reverse energy characterizations are performed using the UIS test circuit shown in Figure 10. Typical UIS voltage and current waveforms are shown in Figure 11. In order to provide the designer with a more extensive characterization than the above mentioned one−point approach, a more comprehensive method for characterizing these devices was developed. A designer can use the given information to determine the appropriateness and safe operating area (SOA) of the selected device. Figure 10. Simplified UIS Test Circuit HIGH SPEED SWITCH CHARGE INDUCTOR DUT GATE VOLTAGE DRAIN VOLTAGE DRAIN CURRENT INDUCTOR CHARGE SWITCH FREE-WHEELING DIODE V + - |
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