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MBRB2535CTLT4G Datasheet(PDF) 2 Page - ON Semiconductor |
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MBRB2535CTLT4G Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 5 page MBRB2535CTLG, NRVBB2535CTLG http://onsemi.com 2 MAXIMUM RATINGS (Per Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 35 V Average Rectified Forward Current, (Rated VR, TC = 110C) IF(AV) 12.5 A Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz, TC = 90C) IFRM 25 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 150 A Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) IRRM 1.0 A Storage Temperature Range Tstg −65 to +150 C Operating Junction Temperature TJ −65 to +125 C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS (Per Leg) Characteristic Symbol Value Unit Thermal Resistance Junction−to−Case Junction−to−Ambient (Note 1) RqJC RqJA 1.0 84 C/W 1. When mounted using minimum recommended pad size on FR−4 board. ELECTRICAL CHARACTERISTICS (Per Leg) Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 2) (iF = 25 A, TJ = 25C) (iF = 12.5 A, TJ = 125C) (iF = 12.5 A, TJ = 25C) vF 0.55 0.41 0.47 V Maximum Instantaneous Reverse Current (Note 2) (Rated dc Voltage, TJ = 125C) (Rated dc Voltage, TJ = 25C) IR 500 10 mA 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%. |
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