MBRB2535CTLG, NRVBB2535CTLG

http://onsemi.com

2

Rating

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

35

V

12.5

A

25

A

Non−Repetitive Peak Surge Current

(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)

150

A

Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)

1.0

A

Storage Temperature Range

−65 to +150

C

Operating Junction Temperature

−65 to +125

C

dv/dt

10,000

V/ms

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

Characteristic

Symbol

Value

Unit

Thermal Resistance

Junction−to−Case

Junction−to−Ambient (Note 1)

1.0

84

C/W

1. When mounted using minimum recommended pad size on FR−4 board.

Characteristic

Symbol

Value

Unit

Maximum Instantaneous Forward Voltage (Note 2)

0.55

0.41

0.47

V

Maximum Instantaneous Reverse Current (Note 2)

500

10

mA

2. Pulse Test: Pulse Width = 300 ms, Duty Cycle  2.0%.