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BUK9629-100B Datasheet(PDF) 1 Page - NXP Semiconductors |
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BUK9629-100B Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 15 page BUK95/9629-100B TrenchMOS™ logic level FET Rev. 01 — 18 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. Product availability: BUK9529-100B in SOT78 (TO-220AB) BUK9629-100B in SOT404 (D2-PAK). 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information [1] It is not possible to make connection to pin 2 of the SOT404 package. s Very low on-state resistance s Q101 compliant s 175 °C rated s Logic level compatible. s Automotive systems s 12 V, 24 V and 42 V loads s Motors, lamps and solenoids s General purpose power switching. s EDS(AL)S ≤ 152 mJ s RDSon =24mΩ (typ) s ID ≤ 46 A s Ptot ≤ 157 W. Table 1: Pinning - SOT78 and SOT404, simplified outline and symbol Pin Description Simplified outline Symbol 1 gate (g) SOT78 (TO-220AB) SOT404 (D2-PAK) 2 drain (d) [1] 3 source (s) mb mounting base; connected to drain (d) MBK106 12 mb 3 13 2 MBK116 mb s d g MBB076 |
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